Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STD7NM50N-1
RFQ
VIEW
RFQ
2,471
In-stock
STMicroelectronics MOSFET N-CH 500V 5A IPAK MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 45W (Tc) N-Channel - 500V 5A (Tc) 780 mOhm @ 2.5A, 10V 4V @ 250µA 12nC @ 10V 400pF @ 50V 10V ±25V
STD12NF06-1
RFQ
VIEW
RFQ
1,092
In-stock
STMicroelectronics MOSFET N-CH 60V 12A IPAK STripFET™ II Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 30W (Tc) N-Channel - 60V 12A (Tc) 100 mOhm @ 6A, 10V 4V @ 250µA 12nC @ 10V 315pF @ 25V 10V ±20V
NDD60N900U1-35G
RFQ
VIEW
RFQ
1,367
In-stock
ON Semiconductor MOSFET N-CH 600V 5.9A IPAK-3 - Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 74W (Tc) N-Channel - 600V 5.7A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 12nC @ 10V 360pF @ 50V 10V ±25V
NDD60N900U1-1G
RFQ
VIEW
RFQ
2,356
In-stock
ON Semiconductor MOSFET N-CH 600V 5.9A IPAK-4 - Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 74W (Tc) N-Channel - 600V 5.7A (Tc) 900 mOhm @ 2.5A, 10V 4V @ 250µA 12nC @ 10V 360pF @ 50V 10V ±25V
FQU2N60CTU
RFQ
VIEW
RFQ
1,508
In-stock
ON Semiconductor MOSFET N-CH 600V 1.9A IPAK QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 2.5W (Ta), 44W (Tc) N-Channel - 600V 1.9A (Tc) 4.7 Ohm @ 950mA, 10V 4V @ 250µA 12nC @ 10V 235pF @ 25V 10V ±30V