- Manufacture :
- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,813
In-stock
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STMicroelectronics | MOSFET N-CH 600V IPAK | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 60W (Tc) | N-Channel | - | 600V | 5A (Tc) | 950 mOhm @ 2.5A, 10V | 4V @ 250µA | 8.8nC @ 10V | 271pF @ 100V | 10V | ±25V | |||
|
VIEW |
3,875
In-stock
|
ON Semiconductor | MOSFET N-CH 800V 1.6A IPAK | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 27.8W (Tc) | N-Channel | - | 800V | 1.6A (Tc) | 4.3 Ohm @ 800mA, 10V | 4.5V @ 160µA | 8.8nC @ 10V | 355pF @ 100V | 10V | ±20V | |||
