Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M006A065PH
RFQ
VIEW
RFQ
1,748
In-stock
Global Power Technologies Group MOSFET N-CH 650V 5.5A IPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 120W (Tc) N-Channel - 650V 5.5A (Tc) 1.6 Ohm @ 2.75A, 10V 4V @ 250µA 17nC @ 10V 1177pF @ 25V 10V ±30V
STU6N62K3
RFQ
VIEW
RFQ
2,312
In-stock
STMicroelectronics MOSFET N-CH 620V 5.5A IPAK SuperMESH3™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 90W (Tc) N-Channel - 620V 5.5A (Tc) 1.2 Ohm @ 2.8A, 10V 4.5V @ 50µA 30nC @ 10V 875pF @ 50V 10V ±30V
FDU7N60NZTU
RFQ
VIEW
RFQ
1,224
In-stock
ON Semiconductor MOSFET N-CH 600V SGL IPAK UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 90W (Tc) N-Channel - 600V 5.5A (Tc) 1.25 Ohm @ 2.75A, 10V 5V @ 250µA 17nC @ 10V 730pF @ 25V 10V ±25V
STU9HN65M2
RFQ
VIEW
RFQ
2,317
In-stock
STMicroelectronics MOSFET N-CH 650V 5.5A IPAK MDmesh™ M2 Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 60W (Tc) N-Channel - 650V 5.5A (Tc) 820 mOhm @ 2.5A, 10V 4V @ 250µA 11.5nC @ 10V 325pF @ 100V 10V ±25V