- Series :
- Operating Temperature :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
812
In-stock
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ON Semiconductor | SUPERFET3 650V IPAK PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 54W (Tc) | N-Channel | - | 650V | 6A (Tc) | 600 mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | 465pF @ 400V | 10V | ±30V | |||
|
VIEW |
2,940
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A IPAK-OS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
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VIEW |
1,096
In-stock
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STMicroelectronics | MOSFET N-CH 525V 2.5A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 45W (Tc) | N-Channel | - | 525V | 2.5A (Tc) | 2.6 Ohm @ 1.25A, 10V | 4.5V @ 50µA | 11nC @ 10V | 334pF @ 100V | 10V | ±30V | |||
