Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
STU7N60M2
RFQ
VIEW
RFQ
2,813
In-stock
STMicroelectronics MOSFET N-CH 600V IPAK MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 60W (Tc) N-Channel - 600V 5A (Tc) 950 mOhm @ 2.5A, 10V 4V @ 250µA 8.8nC @ 10V 271pF @ 100V 10V ±25V
STU10N60M2
RFQ
VIEW
RFQ
669
In-stock
STMicroelectronics MOSFET N-CH 600V IPAK MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 85W (Tc) N-Channel - 600V 7.5A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 13.5nC @ 10V 400pF @ 100V 10V ±25V
STU6N60M2
RFQ
VIEW
RFQ
2,116
In-stock
STMicroelectronics MOSFET N-CH 600V IPAK MDmesh™ II Plus Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 60W (Tc) N-Channel - 600V 4.5A (Tc) 1.2 Ohm @ 2.25A, 10V 4V @ 250µA 13.5nC @ 10V 232pF @ 100V 10V ±25V