- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
-
- 1.1A (Tc) (1)
- 1.5A (Tc) (2)
- 1.6A (Ta) (2)
- 1.7A (Ta) (2)
- 1.8A (Tc) (1)
- 1.9A (Ta) (1)
- 1A (Tc) (2)
- 2.4A (Ta) (1)
- 2.4A (Tc) (1)
- 2.5A (Tc) (1)
- 2.6A (Ta) (1)
- 2.7A (Tc) (1)
- 2.8A (Ta) (1)
- 2.9A (Ta) (1)
- 250mA (Tc) (1)
- 3.7A (Ta) (2)
- 3A (Ta) (1)
- 4A (Tc) (1)
- 5.1A (Ta) (1)
- 600mA (Tc) (1)
- 790mA (Tc) (1)
- 960mA (Tc) (1)
- Rds On (Max) @ Id, Vgs :
-
- 1.2 Ohm @ 660mA, 10V (1)
- 1.5 Ohm @ 500mA, 10V (1)
- 1.5 Ohm @ 580mA, 10V (1)
- 100 mOhm @ 1.5A, 10V (1)
- 125 mOhm @ 2.9A, 10V (1)
- 150 mOhm @ 2.8A, 10V (1)
- 150 mOhm @ 2A, 10V (1)
- 150 Ohm @ 50mA, 10V (1)
- 160 mOhm @ 1.5A, 10V (1)
- 160 mOhm @ 1.9A, 10V (1)
- 2 Ohm @ 470mA, 10V (1)
- 200 mOhm @ 1.6A, 10V (3)
- 220 mOhm @ 1.5A, 10V (1)
- 260 mOhm @ 1.2A, 10V (1)
- 350 mOhm @ 1.4A, 10V (2)
- 350 mOhm @ 2.6A, 10V (1)
- 45 mOhm @ 3.7A, 10V (2)
- 5 Ohm @ 600mA, 10V (1)
- 500 mOhm @ 1.1A, 10V (1)
- 540 mOhm @ 900mA, 10V (1)
- 57.5 mOhm @ 3.1A, 10V (1)
- 75 mOhm @ 2.8A, 10V (1)
- 8 Ohm @ 750mA, 10V (1)
- 800 mOhm @ 500mA, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 1.8nC @ 10V (1)
- 10.7nC @ 10V (2)
- 11nC @ 10V (2)
- 12nC @ 10V (1)
- 13nC @ 10V (2)
- 14nC @ 10V (2)
- 15nC @ 10V (1)
- 17nC @ 10V (1)
- 18.3nC @ 10V (1)
- 21nC @ 10V (1)
- 25nC @ 10V (2)
- 26.9nC @ 10V (1)
- 35nC @ 10V (2)
- 5.4nC @ 10V (1)
- 5.7nC @ 10V (1)
- 6.4nC @ 10V (1)
- 6nC @ 10V (1)
- 7.5nC @ 10V (1)
- 8.2nC @ 10V (2)
- 8.3nC @ 10V (1)
- 8.7nC @ 10V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1055pF @ 50V (1)
- 105pF @ 25V (1)
- 140pF @ 25V (2)
- 170pF @ 25V (1)
- 180pF @ 25V (1)
- 190pF @ 25V (1)
- 200pF @ 25V (1)
- 270pF @ 25V (1)
- 274pF @ 50V (1)
- 280pF @ 25V (1)
- 300pF @ 25V (1)
- 315pF @ 25V (1)
- 330pF @ 25V (2)
- 340pF @ 25V (1)
- 340pF @ 48V (1)
- 400pF @ 25V (1)
- 424pF @ 50V (2)
- 435pF @ 25V (1)
- 59.2pF @ 25V (1)
- 660pF @ 25V (2)
- 850pF @ 25V (1)
- 859pF @ 50V (1)
- 90pF @ 25V (1)
- 975pF @ 25V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
28 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
861
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||||
VIEW |
2,287
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | ||||
VIEW |
2,449
In-stock
|
STMicroelectronics | MOSFET P-CH 60V 2.5A SOT223 | STripFET™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2.5W (Tc) | P-Channel | 60V | 2.5A (Tc) | 220 mOhm @ 1.5A, 10V | 4V @ 250µA | 21nC @ 10V | 850pF @ 25V | 10V | ±20V | ||||
VIEW |
3,809
In-stock
|
STMicroelectronics | MOSFET N-CH 60V 4A SOT-223 | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 3.3W (Tc) | N-Channel | 60V | 4A (Tc) | 100 mOhm @ 1.5A, 10V | 4V @ 250µA | 13nC @ 10V | 315pF @ 25V | 10V | ±20V | ||||
VIEW |
1,264
In-stock
|
Diodes Incorporated | MOSFET P-CH 100V 1.7A SOT223 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | 100V | 1.7A (Ta) | 350 mOhm @ 1.4A, 10V | 4V @ 250µA | 10.7nC @ 10V | 424pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
2,348
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 2.4A SOT-223 | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 3.3W (Tc) | N-Channel | 100V | 2.4A (Tc) | 260 mOhm @ 1.2A, 10V | 4V @ 250µA | 14nC @ 10V | 280pF @ 25V | 10V | ±20V | ||||
VIEW |
3,048
In-stock
|
STMicroelectronics | MOSFET P-CH 60V SOT-223 | DeepGATE™, STripFET™ VI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2.6W (Tc) | P-Channel | 60V | - | 160 mOhm @ 1.5A, 10V | 4V @ 250µA | 6.4nC @ 10V | 340pF @ 48V | 10V | ±20V | ||||
VIEW |
2,445
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 1.5A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 100V | 1.5A (Tc) | 540 mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | 180pF @ 25V | 10V | ±20V | ||||
VIEW |
1,709
In-stock
|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 600MA SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2.5W (Tc) | N-Channel | 600V | 600mA (Tc) | 5 Ohm @ 600mA, 10V | 4V @ 250µA | 13nC @ 10V | 435pF @ 25V | 10V | ±30V | ||||
VIEW |
1,693
In-stock
|
Diodes Incorporated | MOSFET P-CH 100V SOT223 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | 100V | 2.4A (Ta) | 350 mOhm @ 1.4A, 10V | 4V @ 250µA | 10.7nC @ 10V | 424pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
3,487
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 1A SOT-223 | STripFET™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2.5W (Tc) | N-Channel | 100V | 1A (Tc) | 800 mOhm @ 500mA, 10V | 4V @ 250µA | 6nC @ 10V | 105pF @ 25V | 10V | ±20V | ||||
VIEW |
842
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 0.96A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 200V | 960mA (Tc) | 1.5 Ohm @ 580mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | ||||
VIEW |
2,523
In-stock
|
Vishay Siliconix | MOSFET N-CH 250V 790MA SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 250V | 790mA (Tc) | 2 Ohm @ 470mA, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | ||||
VIEW |
3,199
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 1.7A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | 100V | 1.7A (Ta) | 350 mOhm @ 2.6A, 10V | 4V @ 250µA | 5.4nC @ 10V | 274pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
2,045
In-stock
|
Diodes Incorporated | MOSFETP-CHAN 450VSOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 13.9W (Tc) | P-Channel | 450V | 250mA (Tc) | 150 Ohm @ 50mA, 10V | 4V @ 250µA | 1.8nC @ 10V | 59.2pF @ 25V | 10V | ±30V | ||||
VIEW |
1,122
In-stock
|
Vishay Siliconix | MOSFET N-CH 60V 2.7A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | N-Channel | 60V | 2.7A (Tc) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | 300pF @ 25V | 10V | ±20V | ||||
VIEW |
700
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 1.9A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 55V | 1.9A (Ta) | 160 mOhm @ 1.9A, 10V | 4V @ 250µA | 11nC @ 10V | 190pF @ 25V | 10V | ±20V | ||||
VIEW |
948
In-stock
|
Central Semiconductor Corp | MOSFET N-CH 100V 3A SOT-223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | 100V | 3A (Ta) | 150 mOhm @ 2A, 10V | 4V @ 250µA | 15nC @ 10V | 975pF @ 25V | 10V | 20V | ||||
VIEW |
1,204
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 2.8A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 55V | 2.8A (Ta) | 75 mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3nC @ 10V | 400pF @ 25V | 10V | ±20V | ||||
VIEW |
2,685
In-stock
|
Diodes Incorporated | MOSFET N-CH 100V 2.9A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | 100V | 2.9A (Ta) | 125 mOhm @ 2.9A, 10V | 4V @ 250µA | 17nC @ 10V | 859pF @ 50V | 10V | ±20V | ||||
VIEW |
3,019
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5.1A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 55V | 5.1A (Ta) | 57.5 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 340pF @ 25V | 10V | ±20V | ||||
VIEW |
3,543
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 3.7A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 55V | 3.7A (Ta) | 45 mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | 660pF @ 25V | 10V | ±20V | ||||
VIEW |
3,266
In-stock
|
Diodes Incorporated | MOSFET P-CH 100V 2.6A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | P-Channel | 100V | 2.6A (Ta) | 150 mOhm @ 2.8A, 10V | 4V @ 250µA | 26.9nC @ 10V | 1055pF @ 50V | 6V, 10V | ±20V | ||||
VIEW |
1,895
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | ||||
VIEW |
2,804
In-stock
|
Exar Corporation | MOSFET N-CH 600V 1.5A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 20W (Tc) | N-Channel | 600V | 1.5A (Tc) | 8 Ohm @ 750mA, 10V | 4V @ 250µA | 7.5nC @ 10V | 170pF @ 25V | 10V | ±30V | ||||
VIEW |
767
In-stock
|
STMicroelectronics | MOSFET N-CH 200V 1A SOT-223 | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta) | N-Channel | 200V | 1A (Tc) | 1.5 Ohm @ 500mA, 10V | 4V @ 250µA | 5.7nC @ 10V | 90pF @ 25V | 10V | ±20V | ||||
VIEW |
1,792
In-stock
|
Vishay Siliconix | MOSFET P-CH 60V 1.8A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | P-Channel | 60V | 1.8A (Tc) | 500 mOhm @ 1.1A, 10V | 4V @ 250µA | 12nC @ 10V | 270pF @ 25V | 10V | ±20V | ||||
VIEW |
3,881
In-stock
|
Vishay Siliconix | MOSFET P-CH 100V 1.1A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 2W (Ta), 3.1W (Tc) | P-Channel | 100V | 1.1A (Tc) | 1.2 Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | 10V | ±20V |