Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET P-CH 55V 18A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 57W (Tc) P-Channel - 55V 18A (Tc) 110 mOhm @ 9.6A, 10V 4V @ 250µA 32nC @ 10V 650pF @ 25V 10V ±20V
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Vishay Siliconix MOSFET N-CHAN 800V TO-251 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 69W (Tc) N-Channel - 800V 4.3A (Tc) 1.27 Ohm @ 2A, 10V 4V @ 250µA 32nC @ 10V 622pF @ 100V 10V ±30V
IRFU3911PBF
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1,582
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Infineon Technologies MOSFET N-CH 100V 14A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 56W (Tc) N-Channel - 100V 14A (Tc) 115 mOhm @ 8.4A, 10V 4V @ 250µA 32nC @ 10V 740pF @ 25V 10V ±20V
IRFU5505
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1,974
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Infineon Technologies MOSFET P-CH 55V 18A I-PAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 57W (Tc) P-Channel - 55V 18A (Tc) 110 mOhm @ 9.6A, 10V 4V @ 250µA 32nC @ 10V 650pF @ 25V 10V ±20V