Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPS65R650CEAKMA1
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3,966
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Infineon Technologies MOSFET N-CH 700V 10.1A IPAK - Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak IPAK (TO-251) 86W (Tc) N-Channel 700V 10.1A (Tc) 650 mOhm @ 2.1A, 10V 3.5V @ 210µA 23nC @ 10V 440pF @ 100V 10V ±20V
IPSA70R600CEAKMA1
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1,592
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Infineon Technologies MOSFET N-CH 700V 10.5A IPAK - Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak IPAK (TO-251) 86W (Tc) N-Channel 700V 10.5A (Tc) 600 mOhm @ 1A, 10V 3.5V @ 210µA 22nC @ 10V 474pF @ 100V 10V ±20V
IPSA70R2K0CEAKMA1
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RFQ
1,217
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Infineon Technologies MOSFET N-CHANNEL 700V 4A IPAK - Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak IPAK (TO-251) 42W (Tc) N-Channel 700V 4A (Tc) 2 Ohm @ 1A, 10V 3.5V @ 70µA 7.8nC @ 10V 163pF @ 100V 10V ±20V
IPSA70R1K4CEAKMA1
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RFQ
2,357
In-stock
Infineon Technologies MOSFET N-CH 700V 5.4A IPAK - Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak IPAK (TO-251) 53W (Tc) N-Channel 700V 5.4A (Tc) 1.4 Ohm @ 1A, 10V 3.5V @ 100µA 10.5nC @ 10V 225pF @ 100V 10V ±20V