Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFSL4115PBF
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Infineon Technologies MOSFET N-CH 150V 195A TO262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 375W (Tc) N-Channel - 150V 195A (Tc) 12.1 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 10V ±20V
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2,110
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Renesas Electronics America MOSFET N-CH 40V 90A TO-220 - Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262 1.8W (Ta), 176W (Tc) N-Channel - 40V 90A (Tc) 2.8 mOhm @ 45A, 10V 4V @ 250µA 120nC @ 10V 7050pF @ 25V 10V ±20V
IRF1010NLPBF
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2,457
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Infineon Technologies MOSFET N-CH 55V 85A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 180W (Tc) N-Channel - 55V 85A (Tc) 11 mOhm @ 43A, 10V 4V @ 250µA 120nC @ 10V 3210pF @ 25V 10V ±20V
IRF1010NL
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1,069
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Infineon Technologies MOSFET N-CH 55V 85A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 180W (Tc) N-Channel - 55V 85A (Tc) 11 mOhm @ 43A, 10V 4V @ 250µA 120nC @ 10V 3210pF @ 25V 10V ±20V
IRF3710ZLPBF
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1,839
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Infineon Technologies MOSFET N-CH 100V 59A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 160W (Tc) N-Channel - 100V 59A (Tc) 18 mOhm @ 35A, 10V 4V @ 250µA 120nC @ 10V 2900pF @ 25V 10V ±20V
AUIRFSL4115
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RFQ
890
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Infineon Technologies MOSFET N CH 150V 99A TO262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 375W (Tc) N-Channel - 150V 99A (Tc) 12.1 mOhm @ 62A, 10V 5V @ 250µA 120nC @ 10V 5270pF @ 50V 10V ±20V
IRFSL3306PBF
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3,851
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Infineon Technologies MOSFET N-CH 60V 120A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 230W (Tc) N-Channel - 60V 120A (Tc) 4.2 mOhm @ 75A, 10V 4V @ 150µA 120nC @ 10V 4520pF @ 50V 10V ±20V
IRFSL4410ZPBF
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RFQ
3,331
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Infineon Technologies MOSFET N-CH 100V 97A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 230W (Tc) N-Channel - 100V 97A (Tc) 9 mOhm @ 58A, 10V 4V @ 150µA 120nC @ 10V 4820pF @ 50V 10V ±20V