Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Renesas Electronics America MOSFET N-CH 40V 88A TO-262 - Obsolete Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 1.8W (Ta), 200W (Tc) N-Channel - 40V 88A (Tc) 3.4 mOhm @ 44A, 10V 4V @ 250µA 250nC @ 10V 15000pF @ 25V 10V ±20V
IRFSL4310PBF
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2,362
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Infineon Technologies MOSFET N-CH 100V 130A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 300W (Tc) N-Channel - 100V 130A (Tc) 7 mOhm @ 75A, 10V 4V @ 250µA 250nC @ 10V 7670pF @ 50V 10V ±20V
AUIRFSL4310
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1,761
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Infineon Technologies MOSFET N-CH 100V 75A TO262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 300W (Tc) N-Channel - 100V 75A (Tc) 7 mOhm @ 75A, 10V 4V @ 250µA 250nC @ 10V 7670pF @ 50V - -
IRF1407L
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1,493
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Infineon Technologies MOSFET N-CH 75V 100A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 200W (Tc) N-Channel - 75V 100A (Tc) 7.8 mOhm @ 78A, 10V 4V @ 250µA 250nC @ 10V 5600pF @ 25V 10V ±20V