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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF1010EZL	RFQ VIEW	PDF RFQ	610 In-stock	Infineon Technologies	MOSFET N-CH 60V 75A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	140W (Tc)	N-Channel	-	60V	75A (Tc)	8.5 mOhm @ 51A, 10V	4V @ 100µA	86nC @ 10V	2810pF @ 25V	10V	±20V
	IRFSL23N20D102P	RFQ VIEW	PDF RFQ	1,147 In-stock	Infineon Technologies	MOSFET N-CH 200V 24A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 170W (Tc)	N-Channel	-	200V	24A (Tc)	100 mOhm @ 14A, 10V	5.5V @ 250µA	86nC @ 10V	1960pF @ 25V	10V	±30V
	IRF1010EZLPBF	RFQ VIEW	PDF RFQ	3,735 In-stock	Infineon Technologies	MOSFET N-CH 60V 75A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	140W (Tc)	N-Channel	-	60V	75A (Tc)	8.5 mOhm @ 51A, 10V	4V @ 100µA	86nC @ 10V	2810pF @ 25V	10V	±20V
	IRFSL23N20D	RFQ VIEW	PDF RFQ	3,929 In-stock	Infineon Technologies	MOSFET N-CH 200V 24A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 170W (Tc)	N-Channel	-	200V	24A (Tc)	100 mOhm @ 14A, 10V	5.5V @ 250µA	86nC @ 10V	1960pF @ 25V	10V	±30V

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