- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,641
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
3,101
In-stock
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Infineon Technologies | MOSFET N-CH 200V 16A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | N-Channel | 200V | 16A (Tc) | 170 mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
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VIEW |
1,241
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 12A TO262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 278W (Tc) | N-Channel | 600V | 12A (Tc) | 550 mOhm @ 6A, 10V | 4.5V @ 250µA | 50nC @ 10V | 2100pF @ 25V | 10V | ±30V | |||
