- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,182
In-stock
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Infineon Technologies | MOSFET N-CH 30V 105A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 110W (Tc) | N-Channel | - | 30V | 105A (Tc) | 6 mOhm @ 21A, 10V | 2.25V @ 250µA | 35nC @ 4.5V | 2840pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,624
In-stock
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Infineon Technologies | MOSFET N-CH 30V 87A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,365
In-stock
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Infineon Technologies | MOSFET N-CH 30V 87A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,273
In-stock
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Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,856
In-stock
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Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,226
In-stock
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Infineon Technologies | MOSFET N-CH 30V 105A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 110W (Tc) | N-Channel | - | 30V | 105A (Tc) | 6 mOhm @ 21A, 10V | 2.25V @ 250µA | 35nC @ 4.5V | 2840pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,554
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 87A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,464
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 87A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 79W (Tc) | N-Channel | - | 30V | 87A (Tc) | 6.3 mOhm @ 21A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | 2130pF @ 15V | 4.5V, 10V | ±20V | |||
