Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFSL4321PBF
RFQ
VIEW
RFQ
2,275
In-stock
Infineon Technologies MOSFET N-CH 150V 83A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 350W (Tc) N-Channel - 150V 85A (Tc) 15 mOhm @ 33A, 10V 5V @ 250µA 110nC @ 10V 4460pF @ 25V 10V ±30V
IRFSL4228PBF
RFQ
VIEW
RFQ
2,473
In-stock
Infineon Technologies MOSFET N-CH 150V 83A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 330W (Tc) N-Channel - 150V 83A (Tc) 15 mOhm @ 33A, 10V 5V @ 250µA 107nC @ 10V 4530pF @ 25V 10V ±30V