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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF3704LPBF	RFQ VIEW	PDF RFQ	3,603 In-stock	Infineon Technologies	MOSFET N-CH 20V 77A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	87W (Tc)	N-Channel	-	20V	77A (Tc)	9 mOhm @ 15A, 10V	3V @ 250µA	19nC @ 4.5V	1996pF @ 10V	4.5V, 10V	±20V
	IRF3704L	RFQ VIEW	PDF RFQ	2,359 In-stock	Infineon Technologies	MOSFET N-CH 20V 77A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	87W (Tc)	N-Channel	-	20V	77A (Tc)	9 mOhm @ 15A, 10V	3V @ 250µA	19nC @ 4.5V	1996pF @ 10V	4.5V, 10V	±20V
	IRF3709LPBF	RFQ VIEW	PDF RFQ	3,152 In-stock	Infineon Technologies	MOSFET N-CH 30V 90A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.1W (Ta), 120W (Tc)	N-Channel	-	30V	90A (Tc)	9 mOhm @ 15A, 10V	3V @ 250µA	41nC @ 5V	2672pF @ 16V	4.5V, 10V	±20V
	IRF3709L	RFQ VIEW	PDF RFQ	800 In-stock	Infineon Technologies	MOSFET N-CH 30V 90A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.1W (Ta), 120W (Tc)	N-Channel	-	30V	90A (Tc)	9 mOhm @ 15A, 10V	3V @ 250µA	41nC @ 5V	2672pF @ 16V	4.5V, 10V	±20V

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