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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF1404L	RFQ VIEW	PDF RFQ	2,307 In-stock	Infineon Technologies	MOSFET N-CH 40V 162A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 200W (Tc)	N-Channel	-	40V	162A (Tc)	4 mOhm @ 95A, 10V	4V @ 250µA	200nC @ 10V	7360pF @ 25V	10V	±20V
	IRL1404LPBF	RFQ VIEW	PDF RFQ	3,376 In-stock	Infineon Technologies	MOSFET N-CH 40V 160A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 200W (Tc)	N-Channel	-	40V	160A (Tc)	4 mOhm @ 95A, 10V	3V @ 250µA	140nC @ 5V	6600pF @ 25V	4.3V, 10V	±20V
	IRL1404L	RFQ VIEW	PDF RFQ	1,965 In-stock	Infineon Technologies	MOSFET N-CH 40V 160A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 200W (Tc)	N-Channel	-	40V	160A (Tc)	4 mOhm @ 95A, 10V	3V @ 250µA	140nC @ 5V	6600pF @ 25V	4.3V, 10V	±20V
	IRF1404LPBF	RFQ VIEW	PDF RFQ	1,358 In-stock	Infineon Technologies	MOSFET N-CH 40V 162A TO-262		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3.8W (Ta), 200W (Tc)	N-Channel	-	40V	162A (Tc)	4 mOhm @ 95A, 10V	4V @ 250µA	200nC @ 10V	7360pF @ 25V	10V	±20V

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