- Part Status :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,273
In-stock
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Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,856
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 250µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,465
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,973
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 59A (Tc) | 25 mOhm @ 35.4A, 10V | 5.5V @ 250µA | 114nC @ 10V | 2450pF @ 25V | 10V | ±30V | |||
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|
VIEW |
1,839
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 59A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 160W (Tc) | N-Channel | - | 100V | 59A (Tc) | 18 mOhm @ 35A, 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,950
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 59A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 57W (Tc) | N-Channel | - | 30V | 59A (Tc) | 9.5 mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | 1210pF @ 15V | 4.5V, 10V | ±20V | |||
