Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRL2505L
RFQ
VIEW
RFQ
2,991
In-stock
Infineon Technologies MOSFET N-CH 55V 104A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 200W (Tc) N-Channel - 55V 104A (Tc) 8 mOhm @ 54A, 10V 2V @ 250µA 130nC @ 5V 5000pF @ 25V 4V, 10V ±16V
IRL1104L
RFQ
VIEW
RFQ
640
In-stock
Infineon Technologies MOSFET N-CH 40V 104A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 2.4W (Ta), 167W (Tc) N-Channel - 40V 104A (Tc) 8 mOhm @ 62A, 10V 1V @ 250µA 68nC @ 4.5V 3445pF @ 25V 4.5V, 10V ±16V
IRL1104LPBF
RFQ
VIEW
RFQ
2,126
In-stock
Infineon Technologies MOSFET N-CH 40V 104A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 2.4W (Ta), 167W (Tc) N-Channel - 40V 104A (Tc) 8 mOhm @ 62A, 10V 1V @ 250µA 68nC @ 4.5V 3445pF @ 25V 4.5V, 10V ±16V