- Part Status :
- Package / Case :
- Power Dissipation (Max) :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
938
In-stock
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Infineon Technologies | MOSFET N-CH 75V 75A TO262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 300W (Tc) | N-Channel | - | 75V | 160A (Tc) | 4.5 mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | 7500pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,795
In-stock
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Infineon Technologies | MOSFET N-CH 30V 235A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 231W (Tc) | N-Channel | - | 30V | 160A (Tc) | 2.4 mOhm @ 75A, 10V | 4V @ 150µA | 240nC @ 10V | 6320pF @ 25V | 10V | ±20V | |||
|
VIEW |
726
In-stock
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Infineon Technologies | MOSFET N-CH 55V 160A TO262-7 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-7 | TO-262 | 300W (Tc) | N-Channel | - | 55V | 160A (Tc) | 2.6 mOhm @ 140A, 10V | 4V @ 250µA | 200nC @ 10V | 7820pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,369
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.1 mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | 5080pF @ 25V | 4.5V, 10V | ±16V | |||
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|
VIEW |
1,316
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 160A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 300W (Tc) | N-Channel | - | 55V | 160A (Tc) | 3.3 mOhm @ 75A, 10V | 4V @ 250µA | 290nC @ 10V | 7960pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,163
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 3.7 mOhm @ 75A, 10V | 4V @ 250µA | 150nC @ 10V | 4340pF @ 25V | 10V | ±20V | |||
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|
VIEW |
3,376
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 4 mOhm @ 95A, 10V | 3V @ 250µA | 140nC @ 5V | 6600pF @ 25V | 4.3V, 10V | ±20V | |||
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|
VIEW |
1,965
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 160A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 200W (Tc) | N-Channel | - | 40V | 160A (Tc) | 4 mOhm @ 95A, 10V | 3V @ 250µA | 140nC @ 5V | 6600pF @ 25V | 4.3V, 10V | ±20V | |||
