Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Renesas Electronics America MOSFET N-CH 40V 90A TO-220 - Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262 1.8W (Ta), 176W (Tc) N-Channel - 40V 90A (Tc) 2.8 mOhm @ 45A, 10V 4V @ 250µA 120nC @ 10V 7050pF @ 25V 10V ±20V
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1,268
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Renesas Electronics America MOSFET N-CH 55V 90A TO-220 - Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262 1.8W (Ta), 147W (Tc) N-Channel - 55V 90A (Tc) 4.4 mOhm @ 45A, 10V 4V @ 250µA 102nC @ 10V 6000pF @ 25V 10V ±20V
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753
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Renesas Electronics America MOSFET N-CH 40V 89A TO-220 - Active Tube MOSFET (Metal Oxide) 175°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262 1.8W (Ta), 147W (Tc) N-Channel - 40V 90A (Tc) 3.3 mOhm @ 45A, 10V 4V @ 250µA 102nC @ 10V 5850pF @ 25V 10V ±20V
IRF3709LPBF
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3,152
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Infineon Technologies MOSFET N-CH 30V 90A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 120W (Tc) N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 5V 2672pF @ 16V 4.5V, 10V ±20V
IRF3709L
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800
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Infineon Technologies MOSFET N-CH 30V 90A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.1W (Ta), 120W (Tc) N-Channel - 30V 90A (Tc) 9 mOhm @ 15A, 10V 3V @ 250µA 41nC @ 5V 2672pF @ 16V 4.5V, 10V ±20V