Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 150V 33A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 144W (Tc) N-Channel - 150V 33A (Tc) 42 mOhm @ 21A, 10V 5V @ 100µA 40nC @ 10V 1750pF @ 50V 10V ±20V
IRFSL33N15D
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1,413
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Infineon Technologies MOSFET N-CH 150V 33A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 170W (Tc) N-Channel - 150V 33A (Tc) 56 mOhm @ 20A, 10V 5.5V @ 250µA 90nC @ 10V 2020pF @ 25V 10V ±30V
IRF540NL
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3,218
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Infineon Technologies MOSFET N-CH 100V 33A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 130W (Tc) N-Channel - 100V 33A (Tc) 44 mOhm @ 16A, 10V 4V @ 250µA 71nC @ 10V 1960pF @ 25V 10V ±20V
IRFSL5615PBF
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733
In-stock
Infineon Technologies MOSFET N-CH 150V 33A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 144W (Tc) N-Channel - 150V 33A (Tc) 42 mOhm @ 21A, 10V 5V @ 100µA 40nC @ 10V 1750pF @ 50V 10V ±20V
IRF540NLPBF
RFQ
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RFQ
3,708
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Infineon Technologies MOSFET N-CH 100V 33A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 130W (Tc) N-Channel - 100V 33A (Tc) 44 mOhm @ 16A, 10V 4V @ 250µA 71nC @ 10V 1960pF @ 25V 10V ±20V