Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF9Z24NL
RFQ
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RFQ
1,736
In-stock
Infineon Technologies MOSFET P-CH 55V 12A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 45W (Tc) P-Channel 55V 12A (Tc) 175 mOhm @ 7.2A, 10V 4V @ 250µA 19nC @ 10V 350pF @ 25V 10V ±20V
AOW12N65
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RFQ
3,699
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 650V 12A TO262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 278W (Tc) N-Channel 650V 12A (Tc) 720 mOhm @ 6A, 10V 4.5V @ 250µA 48nC @ 10V 2150pF @ 25V 10V ±30V
IRF9Z24NLPBF
RFQ
VIEW
RFQ
1,609
In-stock
Infineon Technologies MOSFET P-CH 55V 12A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 3.8W (Ta), 45W (Tc) P-Channel 55V 12A (Tc) 175 mOhm @ 7.2A, 10V 4V @ 250µA 19nC @ 10V 350pF @ 25V 10V ±20V
AOW12N60
RFQ
VIEW
RFQ
1,241
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 12A TO262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 278W (Tc) N-Channel 600V 12A (Tc) 550 mOhm @ 6A, 10V 4.5V @ 250µA 50nC @ 10V 2100pF @ 25V 10V ±30V
AOW12N50
RFQ
VIEW
RFQ
2,897
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 500V 12A TO262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 250W (Tc) N-Channel 500V 12A (Tc) 520 mOhm @ 6A, 10V 4.5V @ 250µA 37nC @ 10V 1633pF @ 25V 10V ±30V