- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,891
In-stock
|
Infineon Technologies | MOSFET P-CH 100V 23A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 140W (Tc) | P-Channel | - | 100V | 23A (Tc) | 117 mOhm @ 11A, 10V | 4V @ 250µA | 97nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,438
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 21A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 94W (Tc) | N-Channel | - | 150V | 21A (Tc) | 82 mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
|
|
VIEW |
3,020
In-stock
|
Infineon Technologies | MOSFET N-CH 150V 21A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3.8W (Ta), 94W (Tc) | N-Channel | - | 150V | 21A (Tc) | 82 mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | 1300pF @ 25V | 10V | ±20V | |||
