Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFSL3307ZPBF
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1,707
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Infineon Technologies MOSFET N-CH 75V 120A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 230W (Tc) N-Channel - 75V 120A (Tc) 5.8 mOhm @ 75A, 10V 4V @ 150µA 110nC @ 10V 4750pF @ 50V 10V ±20V
IRFSL3206PBF
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1,506
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Infineon Technologies MOSFET N-CH 60V 120A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 300W (Tc) N-Channel - 60V 120A (Tc) 3 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6540pF @ 50V 10V ±20V
IRFSL3306PBF
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3,851
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Infineon Technologies MOSFET N-CH 60V 120A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 230W (Tc) N-Channel - 60V 120A (Tc) 4.2 mOhm @ 75A, 10V 4V @ 150µA 120nC @ 10V 4520pF @ 50V 10V ±20V
IRFSL4310ZPBF
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2,042
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Infineon Technologies MOSFET N-CH 100V 120A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 250W (Tc) N-Channel - 100V 120A (Tc) 6 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6860pF @ 50V 10V ±20V
IRFSL3207ZPBF
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1,426
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Infineon Technologies MOSFET N-CH 75V 120A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 300W (Tc) N-Channel - 75V 120A (Tc) 4.1 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6920pF @ 50V 10V ±20V