Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AUIRLSL3036
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Infineon Technologies MOSFET N-CH 60V 270A TO262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 380W (Tc) N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V
IRLSL3036PBF
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2,166
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Infineon Technologies MOSFET N-CH 60V 195A TO262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 380W (Tc) N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V