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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRL1104L	RFQ VIEW	PDF RFQ	640 In-stock	Infineon Technologies	MOSFET N-CH 40V 104A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	2.4W (Ta), 167W (Tc)	N-Channel	-	40V	104A (Tc)	8 mOhm @ 62A, 10V	1V @ 250µA	68nC @ 4.5V	3445pF @ 25V	4.5V, 10V	±16V
	IRF3205L	RFQ VIEW	PDF RFQ	1,001 In-stock	Infineon Technologies	MOSFET N-CH 55V 110A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	200W (Tc)	N-Channel	-	55V	110A (Tc)	8 mOhm @ 62A, 10V	4V @ 250µA	146nC @ 10V	3247pF @ 25V	10V	±20V
	IRL1104LPBF	RFQ VIEW	PDF RFQ	2,126 In-stock	Infineon Technologies	MOSFET N-CH 40V 104A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	2.4W (Ta), 167W (Tc)	N-Channel	-	40V	104A (Tc)	8 mOhm @ 62A, 10V	1V @ 250µA	68nC @ 4.5V	3445pF @ 25V	4.5V, 10V	±16V
	IRF3205LPBF	RFQ VIEW	PDF RFQ	768 In-stock	Infineon Technologies	MOSFET N-CH 55V 110A TO-262		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	200W (Tc)	N-Channel	-	55V	110A (Tc)	8 mOhm @ 62A, 10V	4V @ 250µA	146nC @ 10V	3247pF @ 25V	10V	±20V

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