- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
804
In-stock
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Renesas Electronics America | MOSFET N-CH 60V 100A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 1.5W (Ta), 156W (Tc) | N-Channel | 60V | 100A (Ta) | 4.6 mOhm @ 50A, 10V | 133nC @ 10V | 7730pF @ 25V | 10V | ±20V | |||
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VIEW |
1,955
In-stock
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Renesas Electronics America | MOSFET N-CH 40V 100A TO-262 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 1.5W (Ta), 119W (Tc) | N-Channel | 40V | 100A (Ta) | 3.7 mOhm @ 50A, 10V | 100nC @ 10V | 5550pF @ 25V | 10V | ±20V | |||
