- Mounting Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,528
In-stock
|
Infineon Technologies | MOSFET N-CH 40V 195A TO262 | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 294W (Tc) | N-Channel | - | 40V | 195A (Tc) | 1.6 mOhm @ 100A, 10V | 3.9V @ 250µA | 324nC @ 10V | 10820pF @ 25V | 6V, 10V | ±20V | |||
|
|
VIEW |
1,893
In-stock
|
Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | HEXFET®, StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 294W (Tc) | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 100A, 10V | 3.7V @ 250µA | 279nC @ 10V | 10034pF @ 25V | 6V, 10V | ±20V | |||
