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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFSL4227PBF	RFQ VIEW	PDF RFQ	3,172 In-stock	Infineon Technologies	MOSFET N-CH 200V 62A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-40°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	330W (Tc)	N-Channel	-	200V	62A (Tc)	26 mOhm @ 46A, 10V	5V @ 250µA	98nC @ 10V	4600pF @ 25V	10V	±30V
	IRFSL4229PBF	RFQ VIEW	PDF RFQ	2,028 In-stock	Infineon Technologies	MOSFET N-CH 250V 45A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-40°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	330W (Tc)	N-Channel	-	250V	45A (Tc)	48 mOhm @ 26A, 10V	5V @ 250µA	110nC @ 10V	4560pF @ 25V	10V	±30V
	IRFSL4228PBF	RFQ VIEW	PDF RFQ	2,473 In-stock	Infineon Technologies	MOSFET N-CH 150V 83A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-40°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	330W (Tc)	N-Channel	-	150V	83A (Tc)	15 mOhm @ 33A, 10V	5V @ 250µA	107nC @ 10V	4530pF @ 25V	10V	±30V
	IRFSL3207	RFQ VIEW	PDF RFQ	1,776 In-stock	Infineon Technologies	MOSFET N-CH 75V 180A TO-262		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	330W (Tc)	N-Channel	-	75V	180A (Tc)	4.5 mOhm @ 75A, 10V	4V @ 250µA	260nC @ 10V	7600pF @ 50V	10V	±20V

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