Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT5016BFLLG
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2,750
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Microsemi Corporation MOSFET N-CH 500V 30A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 329W (Tc) N-Channel - 500V 30A (Tc) 160 mOhm @ 15A, 10V 5V @ 1mA 72nC @ 10V 2833pF @ 25V 10V ±30V
APT28F60B
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3,879
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Microsemi Corporation MOSFET N-CH 600V 28A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 520W (Tc) N-Channel - 600V 30A (Tc) 250 mOhm @ 14A, 10V 5V @ 1mA 140nC @ 10V 5575pF @ 25V 10V ±30V
APT30N60BC6
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RFQ
3,616
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Microsemi Corporation MOSFET N-CH 600V 30A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 219W (Tc) N-Channel - 600V 30A (Tc) 125 mOhm @ 14.5A, 10V 3.5V @ 960µA 88nC @ 10V 2267pF @ 25V 10V ±20V
APT30F50B
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RFQ
2,861
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Microsemi Corporation MOSFET N-CH 500V 30A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 415W (Tc) N-Channel - 500V 30A (Tc) 190 mOhm @ 14A, 10V 5V @ 1mA 115nC @ 10V 4525pF @ 25V 10V ±30V