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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	APT9M100B	RFQ VIEW	PDF RFQ	1,799 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 9A TO-247		POWER MOS 8™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	335W (Tc)	N-Channel	1000V	9A (Tc)	1.4 Ohm @ 5A, 10V	5V @ 1mA	80nC @ 10V	2605pF @ 25V	10V	±30V
	APT14M100B	RFQ VIEW	PDF RFQ	2,188 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 14A TO-247		POWER MOS 8™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	500W (Tc)	N-Channel	1000V	14A (Tc)	900 mOhm @ 7A, 10V	5V @ 1mA	120nC @ 10V	3965pF @ 25V	10V	±30V
	APT9F100B	RFQ VIEW	PDF RFQ	2,250 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 9A TO-247		POWER MOS 8™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	337W (Tc)	N-Channel	1000V	9A (Tc)	1.6 Ohm @ 5A, 10V	5V @ 1mA	80nC @ 10V	2606pF @ 25V	10V	±30V
	APT7F100B	RFQ VIEW	PDF RFQ	3,182 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 7A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	290W (Tc)	N-Channel	1000V	7A (Tc)	2 Ohm @ 4A, 10V	5V @ 500µA	58nC @ 10V	1800pF @ 25V	10V	±30V
	APT14F100B	RFQ VIEW	PDF RFQ	2,720 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 14A TO-247		POWER MOS 8™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	500W (Tc)	N-Channel	1000V	14A (Tc)	980 mOhm @ 7A, 10V	5V @ 1mA	120nC @ 10V	3965pF @ 25V	10V	±30V
	APT1003RBLLG	RFQ VIEW	PDF RFQ	1,820 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 4A TO-247		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	139W (Tc)	N-Channel	1000V	4A (Tc)	3 Ohm @ 2A, 10V	5V @ 1mA	34nC @ 10V	694pF @ 25V	10V	±30V
	APT18M100B	RFQ VIEW	PDF RFQ	1,086 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 18A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	625W (Tc)	N-Channel	1000V	18A (Tc)	700 mOhm @ 9A, 10V	5V @ 1mA	150nC @ 10V	4845pF @ 25V	10V	±30V
	APT10078BLLG	RFQ VIEW	PDF RFQ	2,316 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 14A TO-247		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	403W (Tc)	N-Channel	1000V	14A (Tc)	780 mOhm @ 7A, 10V	5V @ 1mA	95nC @ 10V	2525pF @ 25V	10V	±30V
	APT10090BLLG	RFQ VIEW	PDF RFQ	2,349 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 12A TO-247		POWER MOS 7®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	298W (Tc)	N-Channel	1000V	12A (Tc)	950 mOhm @ 6A, 10V	5V @ 1mA	71nC @ 10V	1969pF @ 25V	10V	±30V
	APT8M100B	RFQ VIEW	PDF RFQ	915 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 8A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	290W (Tc)	N-Channel	1000V	8A (Tc)	1.8 Ohm @ 4A, 10V	5V @ 1mA	60nC @ 10V	1885pF @ 25V	10V	±30V
	APT17F100B	RFQ VIEW	PDF RFQ	2,919 In-stock	Microsemi Corporation	MOSFET N-CH 1000V 17A TO-247		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247 [B]	625W (Tc)	N-Channel	1000V	17A (Tc)	800 mOhm @ 9A, 10V	5V @ 1mA	150nC @ 10V	4845pF @ 25V	10V	±30V

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