Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
APT11N80BC3G
RFQ
VIEW
RFQ
2,187
In-stock
Microsemi Corporation MOSFET N-CH 800V 11A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 156W (Tc) N-Channel 800V 11A (Tc) 450 mOhm @ 7.1A, 10V 3.9V @ 680µA 60nC @ 10V 1585pF @ 25V 10V ±20V
APT8M100B
RFQ
VIEW
RFQ
915
In-stock
Microsemi Corporation MOSFET N-CH 1000V 8A TO-247 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 290W (Tc) N-Channel 1000V 8A (Tc) 1.8 Ohm @ 4A, 10V 5V @ 1mA 60nC @ 10V 1885pF @ 25V 10V ±30V