Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT5018BLLG
RFQ
VIEW
RFQ
2,145
In-stock
Microsemi Corporation MOSFET N-CH 500V 27A TO-247 POWER MOS 7® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 300W (Tc) N-Channel - 500V 27A (Tc) 180 mOhm @ 13.5A, 10V 5V @ 1mA 58nC @ 10V 2596pF @ 25V 10V ±30V
APT5016BFLLG
RFQ
VIEW
RFQ
2,750
In-stock
Microsemi Corporation MOSFET N-CH 500V 30A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 329W (Tc) N-Channel - 500V 30A (Tc) 160 mOhm @ 15A, 10V 5V @ 1mA 72nC @ 10V 2833pF @ 25V 10V ±30V
APT1201R4BFLLG
RFQ
VIEW
RFQ
765
In-stock
Microsemi Corporation MOSFET N-CH 1200V 9A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 300W (Tc) N-Channel - 1200V 9A (Tc) 1.5 Ohm @ 4.5A, 10V 5V @ 1mA 75nC @ 10V 2030pF @ 25V 10V ±30V
APT5024BLLG
RFQ
VIEW
RFQ
2,599
In-stock
Microsemi Corporation MOSFET N-CH 500V 22A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 265W (Tc) N-Channel - 500V 22A (Tc) 240 mOhm @ 11A, 10V 5V @ 1mA 43nC @ 10V 1900pF @ 25V 10V ±30V
APT1003RBLLG
RFQ
VIEW
RFQ
1,820
In-stock
Microsemi Corporation MOSFET N-CH 1000V 4A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 139W (Tc) N-Channel - 1000V 4A (Tc) 3 Ohm @ 2A, 10V 5V @ 1mA 34nC @ 10V 694pF @ 25V 10V ±30V
APT5014BLLG
RFQ
VIEW
RFQ
2,727
In-stock
Microsemi Corporation MOSFET N-CH 500V 35A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 403W (Tc) N-Channel - 500V 35A (Tc) 140 mOhm @ 17.5A, 10V 5V @ 1mA 72nC @ 10V 3261pF @ 25V 10V ±30V
APT10078BLLG
RFQ
VIEW
RFQ
2,316
In-stock
Microsemi Corporation MOSFET N-CH 1000V 14A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 403W (Tc) N-Channel - 1000V 14A (Tc) 780 mOhm @ 7A, 10V 5V @ 1mA 95nC @ 10V 2525pF @ 25V 10V ±30V
APT10090BLLG
RFQ
VIEW
RFQ
2,349
In-stock
Microsemi Corporation MOSFET N-CH 1000V 12A TO-247 POWER MOS 7® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 298W (Tc) N-Channel - 1000V 12A (Tc) 950 mOhm @ 6A, 10V 5V @ 1mA 71nC @ 10V 1969pF @ 25V 10V ±30V
APT1204R7BFLLG
RFQ
VIEW
RFQ
1,553
In-stock
Microsemi Corporation MOSFET N-CH 1200V 3.5A TO-247 POWER MOS 7® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 135W (Tc) N-Channel - 1200V 3.5A (Tc) 4.7 Ohm @ 1.75A, 10V 5V @ 1mA 31nC @ 10V 715pF @ 25V 10V ±30V