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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	STW26NM60	RFQ VIEW	PDF RFQ	3,352 In-stock	STMicroelectronics	MOSFET N-CH 600V 30A TO-247		MDmesh™	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	313W (Tc)	N-Channel	600V	30A (Tc)	135 mOhm @ 13A, 10V	5V @ 250µA	102nC @ 10V	2900pF @ 25V	10V	±30V
	STW11NB80	RFQ VIEW	PDF RFQ	2,177 In-stock	STMicroelectronics	MOSFET N-CH 800V 11A TO-247		PowerMESH™	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	190W (Tc)	N-Channel	800V	11A (Tc)	800 mOhm @ 5.5A, 10V	5V @ 250µA	70nC @ 10V	2900pF @ 25V	10V	±30V
	STW8NB100	RFQ VIEW	PDF RFQ	1,696 In-stock	STMicroelectronics	MOSFET N-CH 1KV 7.3A TO-247		PowerMESH™	Obsolete	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	190W (Tc)	N-Channel	1000V	7.3A (Tc)	1.45 Ohm @ 3.6A, 10V	5V @ 250µA	95nC @ 10V	2900pF @ 25V	10V	±30V
	IRFPF50	RFQ VIEW	PDF RFQ	792 In-stock	Vishay Siliconix	MOSFET N-CH 900V 6.7A TO-247AC		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	190W (Tc)	N-Channel	900V	6.7A (Tc)	1.6 Ohm @ 4A, 10V	4V @ 250µA	200nC @ 10V	2900pF @ 25V	10V	±20V
	IRFPF50PBF	RFQ VIEW	PDF RFQ	3,213 In-stock	Vishay Siliconix	MOSFET N-CH 900V 6.7A TO-247AC		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	190W (Tc)	N-Channel	900V	6.7A (Tc)	1.6 Ohm @ 4A, 10V	4V @ 250µA	200nC @ 10V	2900pF @ 25V	10V	±20V

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