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- Series :
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- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,887
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 5.6A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | 100V | 5.6A (Tc) | 600 mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V | |||
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VIEW |
3,984
In-stock
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STMicroelectronics | MOSFET N-CH 500V 5.6A DPAK | SuperMESH™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 90W (Tc) | N-Channel | 500V | 5.6A (Tc) | 1.2 Ohm @ 2.8A, 10V | 4.5V @ 50µA | 24.6nC @ 10V | 690pF @ 25V | 10V | ±30V | |||
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VIEW |
1,619
In-stock
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Vishay Siliconix | MOSFET P-CH 100V 5.6A DPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 42W (Tc) | P-Channel | 100V | 5.6A (Tc) | 600 mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | 390pF @ 25V | 10V | ±20V |