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- Series :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,472
In-stock
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Infineon Technologies | MOSFET N-CH 200V 5A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V | ||||
VIEW |
3,426
In-stock
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ON Semiconductor | MOSFET P-CH 400V 2.7A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 50W (Tc) | P-Channel | - | 400V | 2.7A (Tc) | 3.1 Ohm @ 1.35A, 10V | 5V @ 250µA | 23nC @ 10V | 680pF @ 25V | 10V | ±30V | ||||
VIEW |
1,887
In-stock
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ON Semiconductor | MOSFET P-CH 500V 2.1A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 50W (Tc) | P-Channel | - | 500V | 2.1A (Tc) | 4.9 Ohm @ 1.05A, 10V | 5V @ 250µA | 23nC @ 10V | 660pF @ 25V | 10V | ±30V | ||||
VIEW |
1,316
In-stock
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ON Semiconductor | MOSFET N-CH 200V 9A DPAK | QFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 2.5W (Ta), 55W (Tc) | N-Channel | - | 200V | 9A (Tc) | 280 mOhm @ 4.5A, 10V | 5V @ 250µA | 23nC @ 10V | 910pF @ 25V | 10V | ±30V | ||||
VIEW |
2,448
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 5A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 43W (Tc) | N-Channel | - | 200V | 5A (Tc) | 600 mOhm @ 2.9A, 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | 10V | ±20V |