Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI3433BDV-T1-E3
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1,034
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Vishay Siliconix MOSFET P-CH 20V 4.3A 6-TSOP TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 6-TSOP 1.1W (Ta) P-Channel - 20V 4.3A (Ta) 42 mOhm @ 5.6A, 4.5V 850mV @ 250µA 18nC @ 4.5V - 1.8V, 4.5V ±8V
SI2312BDS-T1-E3
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3,222
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Vishay Siliconix MOSFET N-CH 20V 3.9A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.9A (Ta) 31 mOhm @ 5A, 4.5V 850mV @ 250µA 12nC @ 4.5V - 1.8V, 4.5V ±8V
SI2312BDS-T1-GE3
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RFQ
1,645
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Vishay Siliconix MOSFET N-CH 20V 3.9A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.9A (Ta) 31 mOhm @ 5A, 4.5V 850mV @ 250µA 12nC @ 4.5V - 1.8V, 4.5V ±8V
SI8406DB-T2-E1
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3,193
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Vishay Siliconix MOSFET N-CH 20V 16A MICROFOOT TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-UFBGA 6-Micro Foot™ (1.5x1) 2.77W (Ta), 13W (Tc) N-Channel - 20V 16A (Tc) 33 mOhm @ 1A, 4.5V 850mV @ 250µA 20nC @ 8V 830pF @ 10V 1.8V, 4.5V ±8V