Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI2335DS-T1-E3
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2,009
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Vishay Siliconix MOSFET P-CH 12V 3.2A SOT23 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 12V 3.2A (Ta) 51 mOhm @ 4A, 4.5V 450mV @ 250µA (Min) 15nC @ 4.5V 1225pF @ 6V 1.8V, 4.5V ±8V
SI2323DS-T1-GE3
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RFQ
2,979
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3 TrenchFET® Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 20V 3.7A (Ta) 39 mOhm @ 4.7A, 4.5V 1V @ 250µA 19nC @ 4.5V 1020pF @ 10V 1.8V, 4.5V ±8V
SI2323DS-T1-E3
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RFQ
3,859
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.7A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 20V 3.7A (Ta) 39 mOhm @ 4.7A, 4.5V 1V @ 250µA 19nC @ 4.5V 1020pF @ 10V 1.8V, 4.5V ±8V
SI2315BDS-T1-E3
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RFQ
1,603
In-stock
Vishay Siliconix MOSFET P-CH 12V 3A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 12V 3A (Ta) 50 mOhm @ 3.85A, 4.5V 900mV @ 250µA 15nC @ 4.5V 715pF @ 6V 1.8V, 4.5V ±8V
SI2333DS-T1-GE3
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RFQ
810
In-stock
Vishay Siliconix MOSFET P-CH 12V 4.1A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 12V 4.1A (Ta) 32 mOhm @ 5.3A, 4.5V 1V @ 250µA 18nC @ 4.5V 1100pF @ 6V 1.8V, 4.5V ±8V
SI2312BDS-T1-E3
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RFQ
3,222
In-stock
Vishay Siliconix MOSFET N-CH 20V 3.9A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.9A (Ta) 31 mOhm @ 5A, 4.5V 850mV @ 250µA 12nC @ 4.5V - 1.8V, 4.5V ±8V
SI2312BDS-T1-GE3
RFQ
VIEW
RFQ
1,645
In-stock
Vishay Siliconix MOSFET N-CH 20V 3.9A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.9A (Ta) 31 mOhm @ 5A, 4.5V 850mV @ 250µA 12nC @ 4.5V - 1.8V, 4.5V ±8V
SI2314EDS-T1-E3
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RFQ
1,946
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Vishay Siliconix MOSFET N-CH 20V 3.77A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) N-Channel - 20V 3.77A (Ta) 33 mOhm @ 5A, 4.5V 950mV @ 250µA 14nC @ 4.5V - 1.8V, 4.5V ±12V
SI2333DS-T1-E3
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RFQ
1,256
In-stock
Vishay Siliconix MOSFET P-CH 12V 4.1A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 750mW (Ta) P-Channel - 12V 4.1A (Ta) 32 mOhm @ 5.3A, 4.5V 1V @ 250µA 18nC @ 4.5V 1100pF @ 6V 1.8V, 4.5V ±8V