Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET N-CH 650V 7A TO220AB - Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 78W (Tc) N-Channel 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V
SIHB6N65E-GE3
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2,541
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Vishay Siliconix MOSFET N-CH 650V 7A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 78W (Tc) N-Channel 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V
SIHB6N65E-GE3
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2,698
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Vishay Siliconix MOSFET N-CH 650V 7A D2PAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 78W (Tc) N-Channel 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V
SIHD6N65E-GE3
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2,588
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Vishay Siliconix MOSFET N-CH 650V 7A TO252 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 78W (Tc) N-Channel 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V
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740
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Vishay Siliconix MOSFET N-CH 650V 7A TO252AA E Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 78W (Tc) N-Channel 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V
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2,005
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Vishay Siliconix MOSFET N-CH 650V 7A TO252AA E Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 78W (Tc) N-Channel 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V
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3,364
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Vishay Siliconix MOSFET N-CH 650V 7A TO252AA E Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 78W (Tc) N-Channel 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V
SIHU6N65E-GE3
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2,395
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Vishay Siliconix MOSFET N-CH 650V 6A IPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Long Leads, IPak, TO-251AB IPAK (TO-251) 78W (Tc) N-Channel 650V 7A (Tc) 600 mOhm @ 3A, 10V 4V @ 250µA 48nC @ 10V 820pF @ 100V 10V ±30V