Package / Case :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Transphorm MOSFET N-CH 650V 36A TO247 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 125W (Tc) N-Channel 650V 36A (Tc) 60 mOhm @ 22A, 8V 2.6V @ 700µA 42nC @ 8V 2200pF @ 400V 8V ±18V