Operating Temperature :
Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Drive Voltage (Max Rds On, Min Rds On) :
Vgs (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TPCF8B01(TE85L,F,M
RFQ
VIEW
RFQ
3,387
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 2.7A VS-8 U-MOSIII Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead VS-8 (2.9x1.5) 330mW (Ta) P-Channel Schottky Diode (Isolated) 20V 2.7A (Ta) 110 mOhm @ 1.4A, 4.5V 1.2V @ 200µA 6nC @ 5V 470pF @ 10V 1.8V, 4.5V ±8V
TK7S10N1Z,LQ
RFQ
VIEW
RFQ
791
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 7A DPAK U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK+ 50W (Tc) N-Channel - 100V 7A (Ta) 48 mOhm @ 3.5A, 10V 4V @ 100µA 7.1nC @ 10V 470pF @ 10V 10V ±20V