Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK5P60W,RVQ
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2,185
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Toshiba Semiconductor and Storage MOSFET N CH 600V 5.4A DPAK DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 5.4A (Ta) 900 mOhm @ 2.7A, 10V 3.7V @ 270µA 10.5nC @ 10V 380pF @ 300V 10V ±30V
TK31V60X,LQ
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2,066
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 30.8A 5DFN DTMOSIV-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 240W (Tc) N-Channel Super Junction 600V 30.8A (Ta) 98 mOhm @ 9.4A, 10V 3.5V @ 1.5mA 65nC @ 10V 3000pF @ 300V 10V ±30V
TK7P60W5,RVQ
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696
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 7A DPAK DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel Super Junction 600V 7A (Ta) 670 mOhm @ 3.5A, 10V 4.5V @ 350µA 16nC @ 10V 490pF @ 300V 10V ±30V
TK10P60W,RVQ
RFQ
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RFQ
1,458
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Toshiba Semiconductor and Storage MOSFET N CH 600V 9.7A DPAK DTMOSIV Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 80W (Tc) N-Channel Super Junction 600V 9.7A (Ta) 430 mOhm @ 4.9A, 10V 3.7V @ 500µA 20nC @ 10V 700pF @ 300V 10V ±30V