- Part Status :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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11 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
951
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 30V | 13A (Ta) | 11.4 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1350pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
720
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 21A SBD 8TSON | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 21A (Ta) | 9.9 mOhm @ 10.5A, 10V | 2.3V @ 1mA | 20nC @ 10V | 1900pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,139
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 11A PS-8 | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 840mW (Ta) | N-Channel | - | 30V | 11A (Ta) | 12.9 mOhm @ 5.5A, 10V | 2.5V @ 1mA | 20nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,805
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A 5DFN | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | 4-DFN-EP (8x8) | 88.3W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 380 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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|
VIEW |
3,539
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 16A 8SOP-ADV | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 25W (Tc) | N-Channel | - | 30V | 16A (Ta) | 11.4 mOhm @ 8A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1600pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,114
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 40V 5A 8SOP | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | P-Channel | - | 40V | 5A (Ta) | 52 mOhm @ 2.5A, 10V | 2V @ 100µA | 20nC @ 10V | 890pF @ 10V | 4.5V, 10V | +20V, -25V | |||
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VIEW |
3,286
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8SOP | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOP | 1W (Ta) | N-Channel | - | 30V | 13A (Ta) | 11.6 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20nC @ 10V | 1350pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,424
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 650V 9.7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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|
VIEW |
677
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 600V 9.7A DPAK | DTMOSV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 30W (Tc) | N-Channel | - | 600V | 9.7A (Tc) | 380 mOhm @ 4.9A, 10V | 4V @ 360µA | 20nC @ 10V | 590pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,995
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 600V 9.7A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | Super Junction | 600V | 9.7A (Ta) | 430 mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
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|
VIEW |
1,805
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 9.3A DPAK | DTMOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 80W (Tc) | N-Channel | - | 650V | 9.3A (Ta) | 560 mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | 700pF @ 300V | 10V | ±30V | |||
