Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SSM3K15CT(TPL3)
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2,517
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 0.1A CST3 π-MOSVI Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-101, SOT-883 CST3 100mW (Ta) N-Channel 30V 100mA (Ta) 4 Ohm @ 10mA, 4V 1.5V @ 100µA - 7.8pF @ 3V 2.5V, 4V ±20V
SSM3K16CT(TPL3)
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668
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Toshiba Semiconductor and Storage MOSFET N-CH 20V 0.1A CST3 S-MOS π-MOSVI Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-101, SOT-883 CST3 100mW (Ta) N-Channel 20V 100mA (Ta) 3 Ohm @ 10mA, 4V 1.1V @ 100µA - 9.3pF @ 3V 1.5V, 4V ±10V
SSM3J15CT(TPL3)
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2,351
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 0.1A CST3 π-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-101, SOT-883 CST3 100mW (Ta) P-Channel 30V 100mA (Ta) 12 Ohm @ 10mA, 4V - - 9.1pF @ 3V 2.5V, 4V ±20V
SSM3J35CT,L3F
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RFQ
692
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Toshiba Semiconductor and Storage MOSFET P-CHANNEL 20V 100MA CST3 π-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C Surface Mount SC-101, SOT-883 CST3 100mW (Ta) P-Channel 20V 100mA (Ta) 8 Ohm @ 50mA, 4V 1V @ 1mA - 12.2pF @ 3V 1.2V, 4V ±10V
SSM3J16CT(TPL3)
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RFQ
2,536
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.1A CST3 π-MOSVI Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-101, SOT-883 CST3 100mW (Ta) P-Channel 20V 100mA (Ta) 8 Ohm @ 10mA, 4V 1.1V @ 100µA - 11pF @ 3V 1.5V, 4V ±10V