- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,461
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 136 mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6nC @ 4V | 568pF @ 10V | 1.5V, 2.5V | ±8V | |||
|
VIEW |
1,149
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 2.6A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
3,405
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 1.8A ES6 | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 40V | 1.8A (Ta) | 195 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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|
VIEW |
1,287
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
2,463
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 130 mOhm @ 1A, 4V | 1V @ 1mA | - | 335pF @ 10V | 1.8V, 4V | ±8V | |||
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|
VIEW |
3,729
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 | U-MOSII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | - | 30V | 1.4A (Ta) | 251 mOhm @ 650mA, 10V | 2.6V @ 1mA | - | 137pF @ 15V | 4V, 10V | ±20V | |||
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|
VIEW |
2,615
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.2A ES6 | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 20V | 3.2A (Ta) | 47 mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | 510pF @ 10V | 1.5V, 4.5V | ±10V | |||
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|
VIEW |
3,572
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4A ES6 | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 4A (Ta) | 40.7 mOhm @ 3A, 4.5V | 1V @ 1mA | 14.1nC @ 4.5V | 970pF @ 10V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
3,929
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | N-Channel | - | 30V | 2.3A (Ta) | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | 270pF @ 10V | 1.8V, 4V | ±12V | |||
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|
VIEW |
1,984
In-stock
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Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE PCH | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 30V | 3.6A (Ta) | 50 mOhm @ 3A, 10V | 1.2V @ 1mA | 7.9nC @ 4.5V | 560pF @ 15V | 1.8V, 10V | ±12V | |||
