- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 11 mOhm @ 20A, 10V (1)
- 16.9 mOhm @ 6.5A, 10V (1)
- 29 mOhm @ 10A, 10V (1)
- 3.2 mOhm @ 9A, 10V (1)
- 4.2 mOhm @ 19A, 10V (1)
- 4.5 mOhm @ 9A, 10V (1)
- 59 mOhm @ 3.1A, 10V (1)
- 6.4 mOhm @ 13A, 10V (1)
- 6.4 mOhm @ 30A, 10V (1)
- 60 mOhm @ 3A, 10V (1)
- 7.5 mOhm @ 25A, 10V (1)
- 8 mOhm @ 11A, 10V (1)
- 8.7 mOhm @ 25A, 10V (1)
- 81 mOhm @ 2.7A, 10V (1)
- 9.4 mOhm @ 14A, 10V (1)
- Vgs(th) (Max) @ Id :
- Applied Filters :
15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
3,250
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6.1A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 60V | 6.1A (Ta) | 59 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,381
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 5.3A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 40V | 5.3A (Ta) | 81 mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7nC @ 10V | 290pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,684
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 5.9A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 30V | 5.9A (Ta) | 60 mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8nC @ 10V | 300pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
798
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 40A 3DP 2-7K1A | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 47W (Tc) | N-Channel | - | 40V | 40A (Ta) | 11 mOhm @ 20A, 10V | 2.3V @ 200µA | 29nC @ 10V | 1920pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,100
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,346
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A SOP8 2-6J1B | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 3.2 mOhm @ 9A, 10V | 2.3V @ 1mA | 82nC @ 10V | 7800pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,697
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 38A 8SOIC ADV | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | - | 30V | 38A (Ta) | 4.2 mOhm @ 19A, 10V | 2.3V @ 500µA | 50nC @ 10V | 4600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
681
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A 8-SOIC | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 4.5 mOhm @ 9A, 10V | 2.3V @ 1mA | 49nC @ 10V | 4600pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,789
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 26A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 26A (Ta) | 6.4 mOhm @ 13A, 10V | 2.3V @ 500µA | 35nC @ 10V | 2900pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,254
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,261
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 20A DPAK-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 27W (Tc) | N-Channel | - | 40V | 20A (Ta) | 29 mOhm @ 10A, 10V | 2.3V @ 100µA | 15nC @ 10V | 985pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,295
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 28A 8-SOP ADV | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | - | 80V | 28A (Ta) | 9.4 mOhm @ 14A, 10V | 2.3V @ 1mA | 91nC @ 10V | 7540pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,235
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 60A DPAK-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 63W (Tc) | N-Channel | - | 30V | 60A (Ta) | 6.4 mOhm @ 30A, 10V | 2.3V @ 500µA | 40nC @ 10V | 2700pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,667
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 50A DP TO252-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 47W (Tc) | N-Channel | - | 30V | 50A (Ta) | 7.5 mOhm @ 25A, 10V | 2.3V @ 200µA | 25.3nC @ 10V | 1700pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,854
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 50A DP TO252-3 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DP | 60W (Tc) | N-Channel | - | 40V | 50A (Ta) | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | 2600pF @ 10V | 4.5V, 10V | ±20V | |||
