- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,970
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.1A USM | π-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | N-Channel | 20V | 100mA (Ta) | 3 Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | 1.5V, 4V | ±10V | |||
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VIEW |
1,266
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 0.1A USM | π-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | USM | 150mW (Ta) | P-Channel | 30V | 100mA (Ta) | 12 Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 2.5V, 4V | ±20V | |||
|
VIEW |
1,344
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 30V 0.1A VESM | π-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | P-Channel | 30V | 100mA (Ta) | 12 Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | 2.5V, 4V | ±20V | |||
|
VIEW |
3,544
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,758
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.17A | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | 60V | 170mA (Ta) | 3.9 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | 17pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,529
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.4A | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 270mW (Ta) | N-Channel | 60V | 400mA (Ta) | 1.5 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,935
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.2A UFM | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | 30V | 2.2A (Ta) | 100 mOhm @ 500mA, 4.5V | 1.1V @ 100µA | - | 245pF @ 10V | 2.5V, 4.5V | ±12V | |||
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VIEW |
2,950
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 12V 14A UDFN6B | U-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | - | P-Channel | 12V | 14A (Ta) | 9.1 mOhm @ 4A, 8V | 1V @ 1mA | 47nC @ 4.5V | 3350pF @ 6V | - | - | |||
