- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,070
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 0.2A S-MINI | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SC-59 | 200mW (Ta) | N-Channel | - | 60V | 200mA (Ta) | 2.1 Ohm @ 500mA, 10V | - | - | 17pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,113
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 200MA SMD | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | S-Mini | 200mW (Ta) | N-Channel | - | 60V | 200mA (Ta) | 2.1 Ohm @ 500mA, 10V | 2.5V @ 250µA | - | 17pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,375
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 6A TSM | U-MOSIV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 6A (Ta) | 27.6 mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | |||
