- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
-
- 1.4A (Ta) (2)
- 1.5A (Ta) (1)
- 1.8A (Ta) (3)
- 100mA (Ta) (1)
- 10A (Ta) (1)
- 180mA (Ta) (1)
- 2.6A (Ta) (1)
- 200mA (Ta) (2)
- 250mA (Ta) (1)
- 2A (Ta) (2)
- 3.2A (Ta) (1)
- 3.4A (Ta) (1)
- 3.9A (Ta) (1)
- 330mA (Ta) (1)
- 3A (Ta) (1)
- 4.2A (Ta) (2)
- 4.4A (Ta) (1)
- 4.6A (Ta) (1)
- 4A (Ta) (4)
- 5.2A (Ta) (1)
- 5.5A (Ta) (2)
- 500mA (Ta) (2)
- 5A (Ta) (1)
- 6A (Ta) (7)
- 800mA (Ta) (4)
- 9.5A (Ta) (1)
- Rds On (Max) @ Id, Vgs :
-
- 1.31 Ohm @ 100mA, 4.5V (1)
- 103 mOhm @ 1.5A, 4.5V (2)
- 130 mOhm @ 1A, 4V (1)
- 136 mOhm @ 1A, 2.5V (1)
- 149 mOhm @ 600mA, 4V (2)
- 15.3 mOhm @ 4A, 4.5V (1)
- 2.2 Ohm @ 100mA, 4.5V (3)
- 213 mOhm @ 1A, 4V (1)
- 22.1 mOhm @ 3A, 4.5V (1)
- 22.1 mOhm @ 6A, 8V (1)
- 22.5 mOhm @ 6A, 4.5V (1)
- 23.1 mOhm @ 4A, 4.5V (1)
- 235 mOhm @ 800mA, 4.5V (4)
- 25.8 mOhm @ 4A, 4.5V (1)
- 28 mOhm @ 3A, 4V (2)
- 29.8 mOhm @ 3A, 4.5V (2)
- 3 Ohm @ 50mA, 4V (1)
- 30.1 mOhm @ 4A, 4.5V (1)
- 31 mOhm @ 4A, 4.5V (1)
- 32.4 mOhm @ 3A, 4.5V (1)
- 32.5 mOhm @ 3A, 4.5V (1)
- 33 mOhm @ 4A, 4.5V (1)
- 38 mOhm @ 3A, 4V (1)
- 390 mOhm @ 800mA, 4.5V (1)
- 40 mOhm @ 2.8A, 4.5V (1)
- 40.7 mOhm @ 3A, 4.5V (1)
- 46 mOhm @ 3A, 4.5V (2)
- 47 mOhm @ 2A, 4.5V (1)
- 55 mOhm @ 3A, 4.5V (1)
- 57 mOhm @ 800mA, 4.5V (1)
- 59 mOhm @ 3A, 4.5V (1)
- 630 mOhm @ 200mA, 5V (2)
- 71 mOhm @ 3A, 4.5V (1)
- 8 Ohm @ 50mA, 4V (1)
- 93 mOhm @ 1.5A, 4.5V (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 1.23nC @ 4V (2)
- 1.2nC @ 4V (1)
- 1.6nC @ 4.5V (1)
- 10.4nC @ 4.5V (2)
- 10.6nC @ 4V (1)
- 10.8nC @ 4.5V (1)
- 10nC @ 5V (1)
- 12.8nC @ 10V (1)
- 12.8nC @ 4.5V (3)
- 13.6nC @ 4V (1)
- 14.1nC @ 4.5V (1)
- 15nC @ 4.5V (1)
- 16.6nC @ 4.5V (1)
- 16.8nC @ 4V (1)
- 19nC @ 4.5V (1)
- 1nC @ 4.5V (4)
- 22.3nC @ 4V (1)
- 23.1nC @ 4.5V (1)
- 24.8nC @ 4.5V (2)
- 29.9nC @ 4.5V (1)
- 2nC @ 4.5V (1)
- 2nC @ 4V (1)
- 3.6nC @ 4.5V (1)
- 38.5nC @ 8V (1)
- 4.6nC @ 4.5V (1)
- 4.7nC @ 4.5V (2)
- 6.4nC @ 4V (1)
- 7.7nC @ 4V (2)
- 8.1nC @ 4.5V (2)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 100pF @ 10V (1)
- 1010pF @ 10V (1)
- 1030pF @ 10V (1)
- 1050pF @ 10V (1)
- 1100pF @ 10V (1)
- 1170pF @ 10V (1)
- 12.2pF @ 3V (1)
- 12pF @ 10V (3)
- 1331pF @ 10V (1)
- 1484pF @ 10V (1)
- 153pF @ 10V (1)
- 1650pF @ 10V (1)
- 177pF @ 10V (1)
- 1800pF @ 10V (2)
- 250pF @ 10V (1)
- 2600pF @ 10V (1)
- 290pF @ 10V (3)
- 331pF @ 10V (2)
- 335pF @ 10V (1)
- 410pF @ 10V (1)
- 43pF @ 10V (1)
- 46pF @ 10V (2)
- 510pF @ 10V (1)
- 55pF @ 10V (4)
- 568pF @ 10V (1)
- 630pF @ 10V (2)
- 640pF @ 10V (2)
- 700pF @ 10V (1)
- 840pF @ 10V (4)
- 9.5pF @ 3V (1)
- 970pF @ 10V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
- Applied Filters :
46 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,998
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A TSM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 20V | 5A (Ta) | 31 mOhm @ 4A, 4.5V | 1V @ 1mA | 19nC @ 4.5V | 1170pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,066
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.18A VESM | π-MOSVI | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 180mA (Ta) | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | 1.2V, 4V | ±10V | ||||
VIEW |
1,037
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 136 mOhm @ 1A, 2.5V | 1V @ 1mA | 10.6nC @ 4V | 568pF @ 10V | 1.5V, 2.5V | ±8V | ||||
VIEW |
2,763
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 9.5A UF6 | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 9.5A (Ta) | 22.1 mOhm @ 3A, 4.5V | 1V @ 1mA | 15nC @ 4.5V | 1100pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,983
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.2A TSM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 20V | 5.2A (Ta) | 46 mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,455
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.6A UFM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4.6A (Ta) | 46 mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,189
In-stock
|
Toshiba Semiconductor and Storage | X34 SMALL LOW ON RESISTANCE NCH | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | 3-SMD, Flat Leads | UFM | 1W (Ta) | N-Channel | - | 20V | 800mA (Ta) | 57 mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | 1.2V, 4.5V | ±8V | ||||
VIEW |
1,141
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 2.6A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 2.6A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
1,447
In-stock
|
Toshiba Semiconductor and Storage | SMALL LOW ON RESISTANCE MOSFET | U-MOSVII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 30.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6nC @ 4.5V | 1030pF @ 10V | 1.8V, 4.5V | ±10V | ||||
VIEW |
1,521
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V | ||||
VIEW |
1,709
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
2,855
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 149 mOhm @ 600mA, 4V | 1V @ 1mA | 7.7nC @ 4V | 331pF @ 10V | 1.5V, 4V | ±8V | ||||
VIEW |
727
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A UF6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 22.5 mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | 1650pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,575
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 20V 100MA CST3 | π-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3 | 100mW (Ta) | P-Channel | - | 20V | 100mA (Ta) | 8 Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | 1.2V, 4V | ±10V | ||||
VIEW |
2,824
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 500MA SSM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 500mA (Ta) | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | 1.5V, 5V | ±10V | ||||
VIEW |
1,601
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.25A VESM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-723 | VESM | 150mW (Ta) | N-Channel | - | 20V | 250mA (Ta) | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 1.5V, 4.5V | ±10V | ||||
VIEW |
3,393
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A VS-6 | U-MOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 40 mOhm @ 2.8A, 4.5V | 1V @ 1mA | 10nC @ 5V | 700pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
1,380
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
702
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,305
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P CH 20V 3.4A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | P-Channel | - | 20V | 3.4A (Ta) | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
1,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 4.2A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 500mW (Ta) | N-Channel | - | 20V | 4.2A (Ta) | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | 1050pF @ 10V | 1.5V, 4V | ±10V | ||||
VIEW |
755
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.4A CST3 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3 | 500mW (Ta) | N-Channel | - | 20V | 1.4A (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
1,594
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 (1.6x1.6) | 500mW (Ta) | P-Channel | - | 20V | 2A (Ta) | 130 mOhm @ 1A, 4V | 1V @ 1mA | - | 335pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
1,562
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 20V 4A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 20V | 4A (Ta) | 33 mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 410pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
1,849
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 3.2A ES6 | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | ES6 | 500mW (Ta) | N-Channel | - | 20V | 3.2A (Ta) | 47 mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | 510pF @ 10V | 1.5V, 4.5V | ±10V | ||||
VIEW |
1,851
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
3,136
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.8A SSM | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM | 150mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
2,917
In-stock
|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 800MA CST3 | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | 3-XFDFN | CST3 | 500mW (Ta) | N-Channel | - | 20V | 800mA (Ta) | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | 55pF @ 10V | 1.5V, 4.5V | ±8V | ||||
VIEW |
894
In-stock
|
Toshiba Semiconductor and Storage | MOSFET NCH 20V 200MA SSM | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TA) | Surface Mount | SC-75, SOT-416 | SSM | 100mW (Ta) | N-Channel | - | 20V | 200mA (Ta) | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | 1.5V, 4.5V | ±10V | ||||
VIEW |
3,249
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.4A UFM | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 4.4A (Ta) | 25.8 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V |