Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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1,474
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Toshiba Semiconductor and Storage X34 PB-F UF6 S-MOS (LF) TRANSIST U-MOSIV Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount 6-SMD, Flat Leads UF6 500mW (Ta) P-Channel - 20V 2.5A (Ta) 64 mOhm @ 1.5A, 4.5V 1.2V @ 200µA - 800pF @ 10V 2V, 4.5V ±10V
SSM3J35AFS,LF
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2,062
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Toshiba Semiconductor and Storage X34 SMALL LOW ON RESISTANCE PCH U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount SC-75, SOT-416 SSM 150mW (Ta) P-Channel - 20V 250mA (Ta) 1.4 Ohm @ 150mA, 4.5V 1V @ 100µA - 42pF @ 10V 1.2V, 4.5V ±10V
SSM3J355R,LF
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1,447
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Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 30.1 mOhm @ 4A, 4.5V 1V @ 1mA 16.6nC @ 4.5V 1030pF @ 10V 1.8V, 4.5V ±10V
SSM6P16FE(TE85L,F)
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3,718
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Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.1A ES6 π-MOSVI Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-563, SOT-666 ES6 150mW (Ta) P-Channel - 20V 100mA (Ta) 8 Ohm @ 10mA, 4V - - 11pF @ 3V 1.5V, 4V ±10V
SSM6J512NU,LF
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RFQ
1,746
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 10A UDFN6B U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 10A (Ta) 16.2 mOhm @ 4A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
SSM3J338R,LF
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RFQ
2,490
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Toshiba Semiconductor and Storage MOSFET P-CH 12V 6A SOT23F U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 12V 6A (Ta) 17.6 mOhm @ 6A, 8V 1V @ 1mA 19.5nC @ 4.5V 1400pF @ 6V 1.8V, 8V ±10V
SSM3J35CT,L3F
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RFQ
3,575
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Toshiba Semiconductor and Storage MOSFET P-CHANNEL 20V 100MA CST3 π-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount SC-101, SOT-883 CST3 100mW (Ta) P-Channel - 20V 100mA (Ta) 8 Ohm @ 50mA, 4V 1V @ 1mA - 12.2pF @ 3V 1.2V, 4V ±10V
SSM3J35CTC,L3F
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RFQ
3,056
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.25A CST3C U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-1123 CST3C 500mW (Ta) P-Channel - 20V 250mA (Ta) 1.4 Ohm @ 150mA, 4.5V 1V @ 100µA - 42pF @ 10V 1.2V, 4.5V ±10V
SSM3J16CT(TPL3)
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RFQ
1,775
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.1A CST3 π-MOSVI Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-101, SOT-883 CST3 100mW (Ta) P-Channel - 20V 100mA (Ta) 8 Ohm @ 10mA, 4V 1.1V @ 100µA - 11pF @ 3V 1.5V, 4V ±10V
SSM3J358R,LF
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RFQ
2,455
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Toshiba Semiconductor and Storage SMALL LOW ON RESISTANCE MOSFET U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-23-3 Flat Leads SOT-23F 1W (Ta) P-Channel - 20V 6A (Ta) 22.1 mOhm @ 6A, 8V 1V @ 1mA 38.5nC @ 8V 1331pF @ 10V 1.8V, 8V ±10V
SSM3J35AMFV,L3F
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RFQ
3,389
In-stock
Toshiba Semiconductor and Storage X34 SMALL LOW ON RESISTANCE PCH U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C Surface Mount SOT-723 VESM 150mW (Ta) P-Channel - 20V 250mA (Ta) 1.4 Ohm @ 150mA, 4.5V 1V @ 100µA - 42pF @ 10V 1.2V, 4.5V ±10V
SSM3J35MFV,L3F
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RFQ
1,973
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.1A VESM π-MOSVI Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SOT-723 VESM 150mW (Ta) P-Channel - 20V 100mA (Ta) 8 Ohm @ 50mA, 4V - - 12.2pF @ 3V 1.2V, 4V ±10V
SSM6J511NU,LF
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RFQ
3,821
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 12V 14A UDFN6B U-MOSVII Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-WDFN Exposed Pad 6-UDFNB (2x2) 1.25W (Ta) P-Channel - 12V 14A (Ta) 9.1 mOhm @ 4A, 8V 1V @ 1mA 47nC @ 4.5V 3350pF @ 6V 1.8V, 8V ±10V